onsemi PowerTrench Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC FDS9945
- RS Stock No.:
- 917-5500P
- Mfr. Part No.:
- FDS9945
- Brand:
- onsemi
Subtotal 100 units (supplied on a continuous strip)*
£26.90
(exc. VAT)
£32.30
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 700 unit(s) shipping from 10 November 2025
Units | Per unit |
|---|---|
| 100 - 475 | £0.269 |
| 500 - 975 | £0.224 |
| 1000 - 2475 | £0.191 |
| 2500 + | £0.171 |
*price indicative
- RS Stock No.:
- 917-5500P
- Mfr. Part No.:
- FDS9945
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 8 nC @ 5 V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 8 nC @ 5 V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
