onsemi PowerTrench N-Channel MOSFET, 10 A, 60 V, 8-Pin SOIC FDS5670
- RS Stock No.:
- 917-5475P
- Mfr. Part No.:
- FDS5670
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£76.80
(exc. VAT)
£92.15
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 30 March 2026
Units | Per unit |
|---|---|
| 50 - 95 | £1.536 |
| 100 - 495 | £1.332 |
| 500 - 995 | £1.17 |
| 1000 + | £1.066 |
*price indicative
- RS Stock No.:
- 917-5475P
- Mfr. Part No.:
- FDS5670
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5mm | |
| Width | 4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Width 4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
