onsemi UltraFET N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 FDMS3572
- RS Stock No.:
- 917-5469P
- Mfr. Part No.:
- FDMS3572
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£107.80
(exc. VAT)
£129.35
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 05 January 2026
Units | Per unit |
---|---|
50 - 95 | £2.156 |
100 + | £1.87 |
*price indicative
- RS Stock No.:
- 917-5469P
- Mfr. Part No.:
- FDMS3572
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 48 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PQFN8 | |
Series | UltraFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 29 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 78 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
Width | 6mm | |
Number of Elements per Chip | 1 | |
Length | 5mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Height | 0.75mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Width 6mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
UltraFET® MOSFET, Fairchild Semiconductor
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.