onsemi UltraFET N-Channel MOSFET, 48 A, 80 V, 8-Pin PQFN8 FDMS3572
- RS Stock No.:
- 917-5469P
- Mfr. Part No.:
- FDMS3572
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£107.80
(exc. VAT)
£129.35
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £2.156 |
| 100 + | £1.87 |
*price indicative
- RS Stock No.:
- 917-5469P
- Mfr. Part No.:
- FDMS3572
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 48 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PQFN8 | |
| Series | UltraFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 29 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 78 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6mm | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Series UltraFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 78 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6mm | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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