IXYS HiperFET, X2-Class N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 IXFH46N65X2
- RS Stock No.:
- 917-1413P
- Mfr. Part No.:
- IXFH46N65X2
- Brand:
- IXYS
Subtotal 1 unit (supplied in a tube)*
£6.39
(exc. VAT)
£7.67
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 107 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £6.39 |
*price indicative
- RS Stock No.:
- 917-1413P
- Mfr. Part No.:
- IXFH46N65X2
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 46 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | HiperFET, X2-Class | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 69 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 660 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 98 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.13mm | |
| Width | 21.34mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.4V | |
| Height | 5.21mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 650 V | ||
Series HiperFET, X2-Class | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 69 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 660 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 98 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Width 21.34mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.4V | ||
Height 5.21mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS