Microchip N-Channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 2N7008-G
- RS Stock No.:
- 916-3721P
- Mfr. Part No.:
- 2N7008-G
- Brand:
- Microchip
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Units | Per unit |
|---|---|
| 100 + | £0.416 |
*price indicative
- RS Stock No.:
- 916-3721P
- Mfr. Part No.:
- 2N7008-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 230 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.08mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.06mm | |
| Height | 5.33mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 230 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5.08mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.06mm | ||
Height 5.33mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain
The Microchip 2N7008 N-channel enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS device. This device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Lead (Pb)-free
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Lead (Pb)-free
MOSFET Transistors, Microchip