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SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

Available to back order for despatch 19/07/2021
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UnitsPer unit
10 - 28£3.175
30 - 58£3.09
60 - 118£3.01
120 +£2.94

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Channel TypeN
Maximum Continuous Drain Current11.5 A
Maximum Drain Source Voltage900 V
Package TypeTO-247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance360 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage3.5V
Minimum Gate Threshold Voltage1.8V
Maximum Power Dissipation54 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-8 V, +18 V
Number of Elements per Chip1
Maximum Operating Temperature+150 °C
Forward Diode Voltage4.8V
Typical Gate Charge @ Vgs9.5 nC @ 15 V
Transistor MaterialSiC
Minimum Operating Temperature-55 °C