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MPN

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D


Available to back order for despatch 19/07/2021
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Price Each (Supplied in a Tube)

£3.175

(exc. VAT)

£3.81

(inc. VAT)

Units

Added

Packaging Options:
RS Stock No.:
9158842P
Mfr. Part No.:
C3M0280090D
Brand:
Wolfspeed
COO (Country of Origin):
CN
UnitsPer unit
10 - 28£3.175
30 - 58£3.09
60 - 118£3.01
120 +£2.94

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.


• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

AttributeValue
Channel TypeN
Maximum Continuous Drain Current11.5 A
Maximum Drain Source Voltage900 V
Package TypeTO-247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance360 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage3.5V
Minimum Gate Threshold Voltage1.8V
Maximum Power Dissipation54 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-8 V, +18 V
Number of Elements per Chip1
Maximum Operating Temperature+150 °C
Forward Diode Voltage4.8V
Length16.13mm
Typical Gate Charge @ Vgs9.5 nC @ 15 V
Transistor MaterialSiC
Minimum Operating Temperature-55 °C
Height5.21mm
Width21.1mm