SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D

  • RS Stock No. 915-8820
  • Mfr. Part No. C2M0280120D
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 370 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 62.5 W
Transistor Configuration Single
Maximum Gate Source Voltage +25 V
Number of Elements per Chip 1
Height 5.21mm
Width 21.1mm
Transistor Material SiC
Minimum Operating Temperature -55 °C
Forward Diode Voltage 3.3V
Maximum Operating Temperature +150 °C
Length 16.13mm
Typical Gate Charge @ Vgs 20.4 nC @ 20 V
Available to back order for despatch 23/11/2020
Price Each (In a Pack of 2)
£ 4.465
(exc. VAT)
£ 5.358
(inc. VAT)
Units
Per unit
Per Pack*
2 - 8
£4.465
£8.93
10 - 28
£4.21
£8.42
30 - 58
£4.10
£8.20
60 - 118
£3.995
£7.99
120 +
£3.895
£7.79
*price indicative
Packaging Options:
Related Products
Low on-resistance Fast switching speed Fast reverse recovery ...
Description:
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, Ro HS compliant.
Silicon Carbide power MOSFET modules from Wolfspeed, the ...
Description:
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind ...
SCT3080KR is a trench gate structure SiC MOSFET ...
Description:
SCT3080KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance. Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple ...
Industry-leading 16mΩ RDS(on)1200V VBR (minimum) across entire operating ...
Description:
Industry-leading 16mΩ RDS(on)1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C]+15V gate drive voltage Low-impedance package with Kelvin source pin> 8mm of creepage/clearance between drain and source High-speed switching with low output capacitance Fast intrinsic diode with low reverse recovery (QRR)Easy to parallel and simple to drive ApplicationsSolar ...