Wolfspeed SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 C2M0025120D
- RS Stock No.:
- 915-8818
- Mfr. Part No.:
- C2M0025120D
- Brand:
- Wolfspeed
Subtotal (1 unit)*
£94.85
(exc. VAT)
£113.82
(inc. VAT)
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In Stock
- 13 unit(s) ready to ship
- Plus 1,073 unit(s) shipping from 31 October 2025
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Units | Per unit |
|---|---|
| 1 + | £94.85 |
*price indicative
- RS Stock No.:
- 915-8818
- Mfr. Part No.:
- C2M0025120D
- Brand:
- Wolfspeed
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 90 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 34 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 463 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +25 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 161 nC @ 20 V | |
| Length | 16.13mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | SiC | |
| Width | 21.1mm | |
| Forward Diode Voltage | 3.3V | |
| Height | 5.21mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 90 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 34 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 463 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 161 nC @ 20 V | ||
Length 16.13mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material SiC | ||
Width 21.1mm | ||
Forward Diode Voltage 3.3V | ||
Height 5.21mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed