Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF
- RS Stock No.:
- 915-5112P
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£57.00
(exc. VAT)
£68.00
(inc. VAT)
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Temporarily out of stock
- 1,600 unit(s) shipping from 13 November 2025
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Units | Per unit |
|---|---|
| 100 - 180 | £0.57 |
| 200 - 480 | £0.546 |
| 500 - 980 | £0.522 |
| 1000 + | £0.486 |
*price indicative
- RS Stock No.:
- 915-5112P
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Width | 11.3mm | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Width 11.3mm | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF
This high-performance N-channel MOSFET facilitates efficient switching and amplification in various electrical applications. With a continuous drain current capacity of 30A and a maximum drain-source voltage of 55V, it suits automotive, industrial, and consumer electronics applications. Its surface mount design simplifies integration into modern circuit boards, making it a key component for effective power management.
Features & Benefits
• Low gate threshold voltage for enhanced switching speed
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports compact designs
• Efficient drive with capable high gate charge at 5V
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports compact designs
• Efficient drive with capable high gate charge at 5V
Applications
• Power supply circuits for effective voltage regulation
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands
What is the maximum continuous current this component can handle?
The device can handle a maximum continuous drain current of 30A.
How does this MOSFET manage thermal performance?
It operates at a maximum temperature of +175 °C, ensuring reliability in high-temperature environments.
Can it be used in automotive applications?
Yes, its robust construction and high-temperature tolerance make it suitable for various automotive circuits.
What type of circuit configurations can it support?
The MOSFET supports enhancement mode transistor configurations, ideal for switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
