Infineon HEXFET N-Channel MOSFET, 86 A, 55 V, 3-Pin D2PAK IRL3705ZSTRLPBF
- RS Stock No.:
- 915-5073P
- Mfr. Part No.:
- IRL3705ZSTRLPBF
- Brand:
- Infineon
Subtotal 8 units (supplied on a continuous strip)*
£10.368
(exc. VAT)
£12.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 672 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 8 + | £1.296 |
*price indicative
- RS Stock No.:
- 915-5073P
- Mfr. Part No.:
- IRL3705ZSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 86 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 40 nC @ 5 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Width | 11.3mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 40 nC @ 5 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.67mm | ||
Width 11.3mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
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