Infineon HEXFET N-Channel MOSFET, 127 A, 100 V, 3-Pin D2PAK IRFS4310ZTRLPBF
- RS Stock No.:
- 915-5045
- Mfr. Part No.:
- IRFS4310ZTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 4 units)*
£10.24
(exc. VAT)
£12.28
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 324 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 16 | £2.56 | £10.24 |
| 20 - 36 | £2.43 | £9.72 |
| 40 - 96 | £2.33 | £9.32 |
| 100 - 196 | £2.175 | £8.70 |
| 200 + | £2.05 | £8.20 |
*price indicative
- RS Stock No.:
- 915-5045
- Mfr. Part No.:
- IRFS4310ZTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 127 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 11.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 4.83mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 127 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 11.3mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 4.83mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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