Infineon HEXFET N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK IRFR3411TRPBF
- RS Stock No.:
- 915-5014P
- Mfr. Part No.:
- IRFR3411TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 40 units (supplied on a continuous strip)*
£29.56
(exc. VAT)
£35.48
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,080 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 40 - 80 | £0.739 |
| 100 - 180 | £0.708 |
| 200 - 480 | £0.661 |
| 500 + | £0.622 |
*price indicative
- RS Stock No.:
- 915-5014P
- Mfr. Part No.:
- IRFR3411TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Width | 7.49mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Width 7.49mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Height 2.39mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF
This MOSFET is crucial for high-power electronic applications, delivering robust performance with low on-resistance and a wide operating temperature range. Utilising HEXFET technology, it ensures efficient operation, making it suitable for various industrial and automation tasks. Its surface-mount DPAK (TO-252) package facilitates easy integration into electronic circuits, while the enhancement mode design optimises switching efficiency.
Features & Benefits
• Continuous drain current capability of 32A for versatile applications
• Maximum voltage rating of 100V for flexible usage
• Low RDS(on) of 44mΩ reduces power loss and heat generation
• Maximum power dissipation of 130W for enhanced durability
• Supports high-speed switching for improved circuit performance
• Surface mounting design simplifies PCB integration
• Maximum voltage rating of 100V for flexible usage
• Low RDS(on) of 44mΩ reduces power loss and heat generation
• Maximum power dissipation of 130W for enhanced durability
• Supports high-speed switching for improved circuit performance
• Surface mounting design simplifies PCB integration
Applications
• Utilised in DC-DC converters within industrial power supply systems
• Effective for motor control circuits in robotics and automation
• Suitable for power management in telecommunications equipment
• Employed in electronic lighting systems for energy efficiency
• Effective for motor control circuits in robotics and automation
• Suitable for power management in telecommunications equipment
• Employed in electronic lighting systems for energy efficiency
What type of PCB mounting methods are compatible with this device?
It is designed for surface mounting using vapour phase, infrared, or wave soldering techniques, ensuring versatility in assembly methods.
Can this device handle pulsed drain currents?
Yes, it is rated for pulsed drain currents up to 110A, allowing flexibility in transient load conditions without damage.
What is the thermal resistance for this component?
The junction-to-case thermal resistance is 1.2°C/W, enabling effective heat management during operation.
What temperature range can it operate in?
This MOSFET operates effectively between -55°C and +175°C, suited for extreme environmental conditions.
How does the gate charge impact performance?
With a typical gate charge of 48nC at 10V, it ensures faster switching times, reducing losses and improving efficiency in circuits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
