Infineon HEXFET N-Channel MOSFET, 14 A, 30 V, 8-Pin SOIC IRF8721TRPBF
- RS Stock No.:
- 915-4979
- Mfr. Part No.:
- IRF8721TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£10.08
(exc. VAT)
£12.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.504 | £10.08 |
| 200 - 480 | £0.479 | £9.58 |
| 500 - 980 | £0.449 | £8.98 |
| 1000 - 1980 | £0.419 | £8.38 |
| 2000 + | £0.388 | £7.76 |
*price indicative
- RS Stock No.:
- 915-4979
- Mfr. Part No.:
- IRF8721TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 8.3 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
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