Infineon HEXFET N-Channel MOSFET, 9.3 A, 80 V, 8-Pin SOIC IRF7493TRPBF
- RS Stock No.:
- 915-4960P
- Mfr. Part No.:
- IRF7493TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£6.85
(exc. VAT)
£8.22
(inc. VAT)
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In Stock
- 3,380 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 + | £0.685 |
*price indicative
- RS Stock No.:
- 915-4960P
- Mfr. Part No.:
- IRF7493TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.3 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.3 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 35 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
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