Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
- RS Stock No.:
- 915-4923P
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 50 - 90 | £1.226 |
| 100 - 240 | £1.174 |
| 250 - 490 | £1.122 |
| 500 + | £0.71 |
*price indicative
- RS Stock No.:
- 915-4923P
- Mfr. Part No.:
- IRF1010ZSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 94 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 11.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 94 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Transistor Material Si | ||
Width 11.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 4.83mm | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF
This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.
Features & Benefits
• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs
Applications
• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion
What are the implications of the low on-resistance feature?
The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.
How does this MOSFET perform in high-temperature environments?
It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.
What type of mounting is required for this component?
This device is designed for surface mount applications, allowing compact layout and efficient thermal management on printed circuit boards.
Can it handle pulsed currents effectively?
Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
