Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
- RS Stock No.:
- 914-0194P
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Brand:
- Infineon
Subtotal 25 units (supplied in a tube)*
£64.80
(exc. VAT)
£77.75
(inc. VAT)
FREE delivery for orders over £50.00
- 285 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 25 - 45 | £2.592 | 
| 50 - 120 | £2.418 | 
| 125 - 245 | £2.246 | 
| 250 + | £2.074 | 
*price indicative
- RS Stock No.:
- 914-0194P
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | SIPMOS® | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 340 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 115 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.6V | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type P | ||
| Maximum Continuous Drain Current 80 A | ||
| Maximum Drain Source Voltage 60 V | ||
| Package Type TO-220 | ||
| Series SIPMOS® | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 23 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4V | ||
| Minimum Gate Threshold Voltage 2.1V | ||
| Maximum Power Dissipation 340 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Number of Elements per Chip 1 | ||
| Length 10.36mm | ||
| Transistor Material Si | ||
| Width 4.57mm | ||
| Typical Gate Charge @ Vgs 115 nC @ 10 V | ||
| Maximum Operating Temperature +175 °C | ||
| Forward Diode Voltage 1.6V | ||
| Height 15.95mm | ||
| Minimum Operating Temperature -55 °C | ||
Infineon SIPMOS® P-Channel MOSFETs
· Pb-free lead plating, RoHS compliant


