Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 IPP037N08N3GXKSA1
- RS Stock No.:
- 914-0182P
- Mfr. Part No.:
- IPP037N08N3G
- Brand:
- Infineon
Subtotal 50 units (supplied in a tube)*
£96.90
(exc. VAT)
£116.30
(inc. VAT)
FREE delivery for orders over £50.00
- 80 unit(s) shipping from 06 October 2025
Units | Per unit |
---|---|
50 - 90 | £1.938 |
100 - 240 | £1.877 |
250 - 490 | £1.734 |
500 + | £1.612 |
*price indicative
- RS Stock No.:
- 914-0182P
- Mfr. Part No.:
- IPP037N08N3G
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 80 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 6.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 214 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 4.57mm | |
Transistor Material | Si | |
Length | 10.36mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 88 nC @ 10 V | |
Forward Diode Voltage | 1.2V | |
Height | 15.95mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.57mm | ||
Transistor Material Si | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 88 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating