N-Channel MOSFET, 94 A, 55 V, 3-Pin TO-220AB Infineon IRF1010ZPBF
- RS Stock No.:
- 913-3910
- Mfr. Part No.:
- IRF1010ZPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 913-3910
- Mfr. Part No.:
- IRF1010ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 94 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 8.77mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 94 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.69mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 8.77mm | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZPBF
This MOSFET is engineered to deliver high performance for a variety of electronic applications. With its significant current capacity and voltage rating, it is a preferred choice for professionals in automation and electronics. Advanced processing methods ensure an efficient and dependable solution for modern electrical systems.
Features & Benefits
• Low on-resistance of 7.5mΩ for enhanced performance
• Junction temperature tolerance up to 175°C
• Fast switching speeds minimise energy loss in circuits
• Enhancement mode design for improved control
• Junction temperature tolerance up to 175°C
• Fast switching speeds minimise energy loss in circuits
• Enhancement mode design for improved control
Applications
• Power management in automotive systems
• Power supply circuits used in industrial machinery
• High-efficiency converters and inverters
• Motor control systems for increased efficiency
• Renewable energy for optimised performance
• Power supply circuits used in industrial machinery
• High-efficiency converters and inverters
• Motor control systems for increased efficiency
• Renewable energy for optimised performance
What are the maximum gate-source voltage levels?
It can handle gate-source voltages ranging from -20V to +20V, allowing flexibility in various circuit designs.
How does temperature affect performance?
The performance remains stable across a wide temperature range, efficiently operating from -55°C to +175°C, making it suitable for extreme conditions.
What type of applications can benefit from this component’s fast switching characteristics?
Fast switching capabilities are advantageous in high-frequency applications such as DC-DC converters, which require rapid on-off control.
Is this component suitable for use in compact designs?
Yes, its TO-220AB package type allows for easy integration into compact PCB layouts without sacrificing performance.
How does the low RDS(on) improve energy efficiency?
A lower RDS(on) results in reduced power loss during operation, improving overall energy efficiency and extending system lifespan.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
