Dual N-Channel MOSFET, 2.6 A, 60 V, 8-Pin SOIC Infineon BSO615NGHUMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
911-4965
Mfr. Part No.:
BSO615NGHUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Transistor Material

Si

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Series

SIPMOS

COO (Country of Origin):
DE

Infineon SIPMOS® Dual N-Channel MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.