N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON Infineon BSC027N04LSGATMA1
- RS Stock No.:
- 911-4855
- Mfr. Part No.:
- BSC027N04LSGATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,690.00
(exc. VAT)
£2,030.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.338 | £1,690.00 |
*price indicative
- RS Stock No.:
- 911-4855
- Mfr. Part No.:
- BSC027N04LSGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.35mm | |
| Transistor Material | Si | |
| Width | 5.35mm | |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V | |
| Series | OptiMOS 3 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.35mm | ||
Transistor Material Si | ||
Width 5.35mm | ||
Typical Gate Charge @ Vgs 64 nC @ 10 V | ||
Series OptiMOS 3 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
- COO (Country of Origin):
- MY