Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 BSP297H6327XTSA1
- RS Stock No.:
- 911-0929
- Mfr. Part No.:
- BSP297H6327XTSA1
- Brand:
- Infineon
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Subtotal (1 reel of 1000 units)*
£272.00
(exc. VAT)
£326.00
(inc. VAT)
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- Shipping from 10 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £0.272 | £272.00 |
| 2000 - 2000 | £0.258 | £258.00 |
| 3000 + | £0.242 | £242.00 |
*price indicative
- RS Stock No.:
- 911-0929
- Mfr. Part No.:
- BSP297H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 660 mA | |
| Maximum Drain Source Voltage | 200 V | |
| Series | SIPMOS® | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 12.9 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.5mm | |
| Transistor Material | Si | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 660 mA | ||
Maximum Drain Source Voltage 200 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 12.9 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.5mm | ||
Transistor Material Si | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1
This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.
Features & Benefits
• N-channel configuration improves switching efficiency
• Low gate threshold voltage ensures compatibility with logic levels
• High voltage ratings accommodate a range of applications
• Enhanced power dissipation capabilities support effective thermal management
• AEC-Q101 qualification adheres to automotive industry standards
• Compact SOT-223 package supports space-efficient designs
• Low gate threshold voltage ensures compatibility with logic levels
• High voltage ratings accommodate a range of applications
• Enhanced power dissipation capabilities support effective thermal management
• AEC-Q101 qualification adheres to automotive industry standards
• Compact SOT-223 package supports space-efficient designs
Applications
• Utilised for motor control in automotive systems
• Applied in power management for consumer electronics
• Used in battery management systems for energy regulation
• Employed in signal amplification within communication devices
• Ideal for switch-mode power supplies that improve efficiency
• Applied in power management for consumer electronics
• Used in battery management systems for energy regulation
• Employed in signal amplification within communication devices
• Ideal for switch-mode power supplies that improve efficiency
What is the maximum operating temperature for optimal performance?
The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.
How should the MOSFET be installed for best results?
Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.
What type of materials is this MOSFET made from?
It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.
Can it withstand severe voltage conditions during operation?
Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
