Infineon DirectFET, HEXFET N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
- RS Stock No.:
- 907-5205P
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
Subtotal 4 units (supplied on a continuous strip)*
£10.18
(exc. VAT)
£12.216
(inc. VAT)
FREE delivery for orders over £50.00
- 6,832 unit(s) ready to ship
Units | Per unit |
---|---|
4 + | £2.545 |
*price indicative
- RS Stock No.:
- 907-5205P
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 375 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DirectFET ISOMETRIC | |
Series | DirectFET, HEXFET | |
Mounting Type | Surface Mount | |
Maximum Drain Source Resistance | 1.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 9.15mm | |
Transistor Material | Si | |
Width | 7.1mm | |
Typical Gate Charge @ Vgs | 200 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Height | 0.49mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 375 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DirectFET ISOMETRIC | ||
Series DirectFET, HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 9.15mm | ||
Transistor Material Si | ||
Width 7.1mm | ||
Typical Gate Charge @ Vgs 200 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 0.49mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
DirectFET® Power MOSFET, Infineon
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm