N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN Infineon IRFH5301TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
907-5191
Mfr. Part No.:
IRFH5301TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.9 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

77 nC @ 10 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.85mm

Series

HEXFET

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.