N-Channel MOSFET, 53 A, 55 V, 3-Pin D2PAK Infineon IRFZ46NSTRLPBF
- RS Stock No.:
- 907-5167
- Mfr. Part No.:
- IRFZ46NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 16 units)*
£22.448
(exc. VAT)
£26.944
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 16 - 64 | £1.403 | £22.45 |
| 80 - 304 | £1.333 | £21.33 |
| 320 - 784 | £1.075 | £17.20 |
| 800 + | £0.746 | £11.94 |
*price indicative
- RS Stock No.:
- 907-5167
- Mfr. Part No.:
- IRFZ46NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 53 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
| Height | 10.48mm | |
| Forward Diode Voltage | 1.3V | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 53 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.54mm | ||
Width 4.69mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Height 10.48mm | ||
Forward Diode Voltage 1.3V | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||