Infineon HEXFET N-Channel MOSFET, 22 A, 55 V, 3-Pin TO-220 FP IRLIZ34NPBF
- RS Stock No.:
- 907-5003
- Mfr. Part No.:
- IRLIZ34NPBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 907-5003
- Mfr. Part No.:
- IRLIZ34NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220 FP | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 37 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.8mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V | |
| Length | 10.6mm | |
| Height | 8.9mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220 FP | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 37 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.8mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 5 V | ||
Length 10.6mm | ||
Height 8.9mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 22A Maximum Continuous Drain Current, 37W Maximum Power Dissipation - IRLIZ34NPBF
This MOSFET is crafted for high-efficiency applications and provides essential characteristics for professionals in automation and electronics. Its N-channel configuration operates in enhancement mode, making it suitable for a range of tasks. The design ensures robust performance in applications that require dependable switching and power management.
Features & Benefits
• Handles continuous drain current up to 22A for solid performance
• Operates at a drain-source voltage of 55V for versatile applications
• Low thermal resistance enhances heat dissipation
• Fast switching speeds improve system responsiveness
• High power dissipation capability supports stable operation
• Compact TO-220 package simplifies installation and maximises space
• Operates at a drain-source voltage of 55V for versatile applications
• Low thermal resistance enhances heat dissipation
• Fast switching speeds improve system responsiveness
• High power dissipation capability supports stable operation
• Compact TO-220 package simplifies installation and maximises space
Applications
• High-power in electrical circuits
• Robotics and automation systems
• Power management for electronic devices
• Motor drives and inverters
• Power supply circuits for increased efficiency
• Robotics and automation systems
• Power management for electronic devices
• Motor drives and inverters
• Power supply circuits for increased efficiency
How does this device perform under varying temperatures?
This MOSFET operates effectively from -55°C to +175°C, ensuring reliability in different environmental conditions.
What type of circuit configuration is compatible with it?
It is well-suited for circuits that require N-channel MOSFET functionality, effectively managing high current flows and voltage levels.
What are the implications of its gate threshold voltage?
With a gate threshold voltage between 1V and 2V, it allows for switching at low voltages, facilitating integration into control circuits.
How does thermal management influence its operation?
Efficient thermal management is crucial, enabling the device to maintain performance without overheating, especially in high-power or continuous applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
