N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSZ900N20NS3GATMA1

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
906-4444
Mfr. Part No.:
BSZ900N20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

15.2 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

8.7 nC @ 10 V

Length

3.4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS 3

Forward Diode Voltage

1.2V

RoHS Status: Exempt