Infineon OptiMOS™ 3 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT020N10N3ATMA1

Subtotal 2 units (supplied on a continuous strip)*

£11.60

(exc. VAT)

£13.92

(inc. VAT)

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Packaging Options:
RS Stock No.:
906-4356P
Mfr. Part No.:
IPT020N10N3ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 3

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.58mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Transistor Material

Si

Width

10.1mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.