N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB010N06NATMA1
- RS Stock No.:
- 906-4353P
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (10 reels of 2 units)**. Quantities below 150 on continuous strip
£116.20
(exc. VAT)
£139.40
(inc. VAT)
Available to back order for despatch 24/07/2025*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit |
|---|---|
| 20 - 98 | £4.955 |
| 100 - 198 | £4.295 |
| 200 - 498 | £4.065 |
| 500 + | £3.635 |
**price indicative
- RS Stock No.:
- 906-4353P
- Mfr. Part No.:
- IPB010N06NATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 5 | |
| Package Type | D2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 1.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 208 nC @ 10 V | |
| Length | 10.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 4.2V | |
| Height | 9.45mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 5 | ||
Package Type D2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 1.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 208 nC @ 10 V | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 4.2V | ||
Height 9.45mm | ||