Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Subtotal 50 units (supplied on a continuous strip)*
£79.35
(exc. VAT)
£95.20
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) shipping from 27 November 2025
| Units | Per unit | 
|---|---|
| 50 - 90 | £1.587 | 
| 100 - 240 | £1.52 | 
| 250 - 490 | £1.453 | 
| 500 + | £1.353 | 
*price indicative
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 137 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.1mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Width | 5.35mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 137 A | ||
| Maximum Drain Source Voltage 60 V | ||
| Series OptiMOS™ 5 | ||
| Package Type TDSON | ||
| Mounting Type Surface Mount | ||
| Pin Count 8 | ||
| Maximum Drain Source Resistance 4.2 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 3.3V | ||
| Minimum Gate Threshold Voltage 2.1V | ||
| Maximum Power Dissipation 100 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Maximum Operating Temperature +150 °C | ||
| Length 6.1mm | ||
| Number of Elements per Chip 1 | ||
| Transistor Material Si | ||
| Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
| Width 5.35mm | ||
| Forward Diode Voltage 1.2V | ||
| Height 1.1mm | ||
| Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™5 Power MOSFETs
Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1
Features & Benefits
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions
Applications
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems


