Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
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Subtotal 50 units (supplied on a continuous strip)*
£79.35
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£95.20
(inc. VAT)
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- 5,000 unit(s) shipping from 27 November 2025
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Units | Per unit |
|---|---|
| 50 - 90 | £1.587 |
| 100 - 240 | £1.52 |
| 250 - 490 | £1.453 |
| 500 + | £1.353 |
*price indicative
- RS Stock No.:
- 906-4296P
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 137 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.1mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Width | 5.35mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 137 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 5 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.1mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Width 5.35mm | ||
Forward Diode Voltage 1.2V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
Infineon OptiMOS™5 Power MOSFETs
Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1
This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.
Features & Benefits
• Supports high-power applications with a maximum power dissipation of 100W
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions
Applications
• Utilised in synchronous rectification circuits for power supplies
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems
What is the suitable temperature range for operation?
It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.
How does this component handle thermal management?
The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.
What gate voltage is required for optimal performance?
The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.
Can it be used in high-frequency switching applications?
Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
