N-Channel MOSFET, 13.8 A, 650 V, 3-Pin I2PAK Infineon IPI60R280C6XKSA1

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
906-2953
Mfr. Part No.:
IPI60R280C6XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13.8 A

Maximum Drain Source Voltage

650 V

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

43 nC @ 10 V

Length

10.36mm

Number of Elements per Chip

1

Width

4.57mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

11.17mm

Infineon CoolMOS™C6/C7 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.