Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D

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Subtotal 5 units (supplied in a tube)*

£44.15

(exc. VAT)

£53.00

(inc. VAT)

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5 - 9£8.83
10 - 29£8.66
30 - 89£8.43
90 +£8.17

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Packaging Options:
RS Stock No.:
904-7345P
Mfr. Part No.:
C2M1000170D
Brand:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +20 V

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

13 nC @ 20 V, 13 nC @ 5 V

Number of Elements per Chip

1

Width

5.21mm

Forward Diode Voltage

3.8V

Minimum Operating Temperature

-55 °C

Height

21.1mm

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation


MOSFET Transistors, Wolfspeed

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