SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D

  • RS Stock No. 904-7345
  • Mfr. Part No. C2M1000170D
  • Brand Wolfspeed
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 5 A
Maximum Drain Source Voltage 1700 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 1.4 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.1V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 69 W
Transistor Configuration Single
Maximum Gate Source Voltage -5 V, +20 V
Number of Elements per Chip 1
Transistor Material SiC
Width 5.21mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 3.8V
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 13 nC @ 20 V, 13 nC @ 5 V
Height 21.1mm
Length 16.13mm
56 In stock for FREE next working day delivery
Price Each
£ 4.32
(exc. VAT)
£ 5.18
(inc. VAT)
Units
Per unit
1 - 4
£4.32
5 - 9
£4.09
10 - 29
£3.99
30 - 89
£3.88
90 +
£3.79
Packaging Options:
Related Products
SCT2H12NZGC11 | N-Channel MOSFET, 3.7 A, 1700 V, ...
Description:
SCT2H12NZGC11 | N-Channel MOSFET, 3.7 A, 1700 V, 3 + Tab-Pin TO-3PFM ROHM SCT2H12NZGC11
Low on-resistance Fast switching speed Long creepage distance ...
Description:
Low on-resistance Fast switching speed Long creepage distance with no center lead Simple to drive Pb-free lead plating, Ro HS compliant.
Low on-resistance Fast switching speed Fast reverse recovery ...
Description:
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, Ro HS compliant.
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.