Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF
- RS Stock No.:
- 903-4706P
- Mfr. Part No.:
- IRFD9020PBF
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied in a tube)*
£120.20
(exc. VAT)
£144.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,000 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 240 | £1.202 |
| 250 - 490 | £1.043 |
| 500 - 990 | £0.994 |
| 1000 + | £0.809 |
*price indicative
- RS Stock No.:
- 903-4706P
- Mfr. Part No.:
- IRFD9020PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.6 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | HVMDIP | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.29mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 6.3V | |
| Height | 3.37mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type HVMDIP | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.29mm | ||
Transistor Material Si | ||
Forward Diode Voltage 6.3V | ||
Height 3.37mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
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