Infineon OptiMOS FD N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 IPP220N25NFDAKSA1
- RS Stock No.:
- 898-6983P
- Mfr. Part No.:
- IPP220N25NFDAKSA1
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£7.20
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£8.64
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- Plus 472 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 2 + | £3.60 |
*price indicative
- RS Stock No.:
- 898-6983P
- Mfr. Part No.:
- IPP220N25NFDAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 61 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220 | |
| Series | OptiMOS FD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 22 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220 | ||
Series OptiMOS FD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Length 10.36mm | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ FD Power MOSFET
Infineon OptiMOS FD Series MOSFET, 61A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPP220N25NFDAKSA1
This MOSFET is designed for high-performance applications that require efficient power management. With its N-channel enhancement mode configuration and robust specifications, it plays an essential role in sectors such as automation, electronics, and electrical systems. It offers a maximum continuous drain current of 61A and a breakdown voltage of 250V, providing reliability and thermal performance in challenging environments.
Features & Benefits
• Low on-resistance increases energy efficiency during operation
• High current capability supports a range of applications
• Elevated operating temperature of up to +175°C enhances versatility
• Optimised for hard commutation, contributing to ruggedness and durability
• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness
• Efficient gate charge characteristics ensure effective switching
• High current capability supports a range of applications
• Elevated operating temperature of up to +175°C enhances versatility
• Optimised for hard commutation, contributing to ruggedness and durability
• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness
• Efficient gate charge characteristics ensure effective switching
Applications
• Used in power conversion circuits for automation equipment
• Ideal for high-power motor drives in industrial machinery
• Commonly applied in power supplies for electronic devices
• Suitable for automotive power management systems
• Employed in renewable energy systems for inverters
• Ideal for high-power motor drives in industrial machinery
• Commonly applied in power supplies for electronic devices
• Suitable for automotive power management systems
• Employed in renewable energy systems for inverters
What is the maximum power dissipation capacity?
It can handle a maximum power dissipation of 300W, ensuring performance in high load scenarios.
How does it perform in high-temperature environments?
This MOSFET can operate continuously at temperatures reaching +175°C, suitable for extreme conditions.
Can it handle pulsed drain currents?
Yes, the device can manage pulsed drain currents up to 244A, beneficial for transient load applications.
What is the significance of its low Rds(on) value?
A low Rds(on) of 22mΩ reduces power loss and increases efficiency during operation, crucial for energy-sensitive applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
