Infineon CoolMOS™ CFD N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1
- RS Stock No.:
- 898-6927P
- Mfr. Part No.:
- IPW65R080CFDAFKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£43.45
(exc. VAT)
£52.15
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 13 left, ready to ship
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Units | Per unit |
|---|---|
| 5 - 9 | £8.69 |
| 10 - 24 | £8.51 |
| 25 - 49 | £7.96 |
| 50 + | £7.41 |
*price indicative
- RS Stock No.:
- 898-6927P
- Mfr. Part No.:
- IPW65R080CFDAFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ CFD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 391 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 5.21mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 167 nC @ 10 V | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-247 | ||
Series CoolMOS™ CFD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 391 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 5.21mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 167 nC @ 10 V | ||
Length 16.13mm | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
