Infineon OptiMOS™ 3 N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 IPP111N15N3GXKSA1
- RS Stock No.:
- 897-7412P
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Brand:
- Infineon
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In Stock
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Units | Per unit |
|---|---|
| 20 - 36 | £2.295 |
| 40 - 96 | £2.198 |
| 100 - 196 | £2.10 |
| 200 + | £1.955 |
*price indicative
- RS Stock No.:
- 897-7412P
- Mfr. Part No.:
- IPP111N15N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 83 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 41 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 83 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 41 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.57mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 83A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IPP111N15N3GXKSA1
This MOSFET is suitable for high-efficiency switching applications, significantly enhancing system efficiency and performance across various industries including automation and electronics. Its features, including a high continuous drain current and broad operating temperature range, make it adaptable for various environments.
Features & Benefits
• N-channel design for effective switching capabilities
• Low on-resistance which reduces power loss
• High power dissipation capacity for consistent operation
• Effectively handles both pulsed and continuous currents
• Through-hole mounting design for easy installation
• Low on-resistance which reduces power loss
• High power dissipation capacity for consistent operation
• Effectively handles both pulsed and continuous currents
• Through-hole mounting design for easy installation
Applications
• Ideal for synchronous rectification in power supplies
• Applicable in high-frequency switching for enhanced efficiency
• Suitable for automotive and industrial automation systems
• Utilised in energy conversion systems like converters and inverters
• Employed in power management for renewable energy technologies
• Applicable in high-frequency switching for enhanced efficiency
• Suitable for automotive and industrial automation systems
• Utilised in energy conversion systems like converters and inverters
• Employed in power management for renewable energy technologies
Can this be used in industrial automation systems?
Yes, it is suitable for automated systems due to its efficiency and dependable performance.
What are the benefits of using this component in power supplies?
It features low on-resistance and high drain current, minimising power losses and improving thermal management in power supply designs.
How does this perform under extreme temperatures?
This component operates reliably within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.
Is it compatible with existing designs in my application?
Yes, its TO-220 package type and through-hole mounting style are compatible with many established circuit designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
