Infineon CoolMOS C3 N-Channel MOSFET, 7.3 A, 650 V, 3-Pin IPAK SPU07N60C3BKMA1
- RS Stock No.:
- 897-7309P
- Mfr. Part No.:
- SPU07N60C3BKMA1
- Brand:
- Infineon
Subtotal 6 units (supplied in a tube)*
£10.062
(exc. VAT)
£12.072
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 6 + | £1.677 |
*price indicative
- RS Stock No.:
- 897-7309P
- Mfr. Part No.:
- SPU07N60C3BKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.3 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS C3 | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 6.22mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.3 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS C3 | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 6.73mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 6.22mm | ||
RoHS Status: Exempt