Infineon OptiMOS™ 2 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-23 BSS205NH6327XTSA1
- RS Stock No.:
- 892-2374P
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
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Subtotal 500 units (supplied on a reel)*
£81.50
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£98.00
(inc. VAT)
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In Stock
- 5,600 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 500 - 900 | £0.163 |
| 1000 - 2400 | £0.129 |
| 2500 - 4900 | £0.089 |
| 5000 + | £0.077 |
*price indicative
- RS Stock No.:
- 892-2374P
- Mfr. Part No.:
- BSS205NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | OptiMOS™ 2 | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 85 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Width | 0.1mm | |
| Transistor Material | Si | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.3mm | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 85 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Width 0.1mm | ||
Transistor Material Si | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.3mm | ||
Forward Diode Voltage 1.1V | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1
This N-channel MOSFET is a vital component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.
Features & Benefits
• Maximum continuous drain current of 2.5A
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
Applications
• Used in automotive power management systems
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
What kind of protection does this offer against voltage spikes?
It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.
What is the significance of the low Rds(on) in this device?
A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.
How can this be installed on a circuit board?
It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.
What are the typical switching characteristics at the rated voltage?
The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
