Infineon OptiMOS™ 3 N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 FP IPA057N06N3GXKSA1
- RS Stock No.:
- 892-2220P
- Mfr. Part No.:
- IPA057N06N3GXKSA1
- Brand:
- Infineon
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Subtotal 50 units (supplied in a tube)*
£82.65
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£99.20
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Units | Per unit |
|---|---|
| 50 - 90 | £1.653 |
| 100 - 240 | £1.583 |
| 250 - 490 | £1.514 |
| 500 + | £1.409 |
*price indicative
- RS Stock No.:
- 892-2220P
- Mfr. Part No.:
- IPA057N06N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.85mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Length | 10.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 16.15mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.85mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Length 10.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 16.15mm | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
Infineon OptiMOS™ 3 Series MOSFET, 60A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IPA057N06N3GXKSA1
This MOSFET is suited for a variety of high-performance applications in automation, electronics, and electrical systems. Capable of handling a maximum continuous drain current of 60A and a drain-source voltage of 60V, it plays a crucial role in efficient power management and control. The robust design ensures stable operation under different conditions.
Features & Benefits
• N-channel configuration provides effective switching performance
• Enhancement mode operation enhances efficiency in applications
• Low RDS(on) value of 5.7mΩ reduces power losses
• Maximum power dissipation of 38W supports high output
• Operates within a temperature range of -55°C to +175°C for diverse environments
• High gate threshold voltage of 4V ensures precise control and responsiveness
• Enhancement mode operation enhances efficiency in applications
• Low RDS(on) value of 5.7mΩ reduces power losses
• Maximum power dissipation of 38W supports high output
• Operates within a temperature range of -55°C to +175°C for diverse environments
• High gate threshold voltage of 4V ensures precise control and responsiveness
Applications
• Applicable in motor control for industrial automation
• Suitable for power supply modules in electronics
• Commonly used in inverter circuits for renewable energy systems
• Employed in automotive for effective power management
• Ideal for switching power supplies in telecommunications
• Suitable for power supply modules in electronics
• Commonly used in inverter circuits for renewable energy systems
• Employed in automotive for effective power management
• Ideal for switching power supplies in telecommunications
What is the maximum power dissipation capability?
It can handle a maximum power dissipation of 38W, ensuring safe operation.
In which temperature range can it operate effectively?
The component reliably functions between -55°C and +175°C, making it versatile for various applications.
What is the significance of the low RDS(on) value?
A low RDS(on) value of 5.7mΩ minimises power losses during operation, enhancing efficiency.
How does the enhancement mode contribute to its performance?
The enhancement mode allows for enhanced control and efficiency, particularly in applications requiring precise switching.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
