N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 Infineon IPP086N10N3GXKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

15.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Length

10.36mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Series

OptiMOS 3

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V