Infineon OptiMOS™ 3 N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP IPA086N10N3GXKSA1
- RS Stock No.:
- 892-2125P
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
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Subtotal 50 units (supplied in a tube)*
£66.40
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£79.70
(inc. VAT)
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In Stock
- Plus 1,730 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 50 - 120 | £1.328 |
| 125 - 245 | £1.24 |
| 250 - 495 | £1.154 |
| 500 + | £1.068 |
*price indicative
- RS Stock No.:
- 892-2125P
- Mfr. Part No.:
- IPA086N10N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 37.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.85mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Length | 10.65mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16.15mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 37.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.85mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Length 10.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 16.15mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1
This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.
Features & Benefits
• N-channel configuration optimises current management
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
• Low on-resistance enhances overall system efficiency
• Operates at temperatures up to +175°C for adaptable applications
• Fully isolated package improves safety during operation
• Compliant with RoHS and halogen-free standards for eco-friendly use
Applications
• Ideal for high-frequency switching in electronic devices
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
• Employed in synchronous rectification to maximise efficiency
• Suitable for requiring high current handling
• Effective in temperature-sensitive environments due to robust thermal performance
What is the significance of the low on-resistance feature in this device?
The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.
Can this MOSFET be used in automotive applications?
Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.
How does the gate threshold voltage influence circuit function?
The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.
What types of circuits are most compatible with this power transistor?
This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
