Toshiba TK N-Channel MOSFET, 52 A, 100 V, 3-Pin TO-220SIS TK22A10N1,S4X(S
- RS Stock No.:
- 891-2948
- Mfr. Part No.:
- TK22A10N1,S4X(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.34
(exc. VAT)
£4.01
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £0.668 | £3.34 |
| 25 - 45 | £0.548 | £2.74 |
| 50 - 95 | £0.50 | £2.50 |
| 100 - 245 | £0.468 | £2.34 |
| 250 + | £0.432 | £2.16 |
*price indicative
- RS Stock No.:
- 891-2948
- Mfr. Part No.:
- TK22A10N1,S4X(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TK | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Length | 10mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Height | 15mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TK | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Length 10mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Height 15mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
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