STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 17.5 A, 950 V, 3-Pin TO-247 STW20N95K5
- RS Stock No.:
- 877-3021P
- Mfr. Part No.:
- STW20N95K5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£128.25
(exc. VAT)
£154.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 April 2026
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Units | Per unit |
|---|---|
| 25 - 45 | £5.13 |
| 50 - 120 | £4.616 |
| 125 + | £4.59 |
*price indicative
- RS Stock No.:
- 877-3021P
- Mfr. Part No.:
- STW20N95K5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.5 A | |
| Maximum Drain Source Voltage | 950 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 330 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5.15mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Length | 15.75mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.15mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 950 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.15mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Length 15.75mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.15mm | ||
- COO (Country of Origin):
- CN
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