STMicroelectronics STripFET P-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 STN3P6F6
- RS Stock No.:
- 877-2949P
- Mfr. Part No.:
- STN3P6F6
- Brand:
- STMicroelectronics
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Subtotal 20 units (supplied on a continuous strip)*
£11.52
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£13.82
(inc. VAT)
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In Stock
- 2,560 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 20 + | £0.576 |
*price indicative
- RS Stock No.:
- 877-2949P
- Mfr. Part No.:
- STN3P6F6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.7mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 1.8mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 6.4 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 1.8mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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