STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2
- RS Stock No.:
- 876-5691P
- Mfr. Part No.:
- STP18N65M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£49.70
(exc. VAT)
£59.65
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 90 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £1.988 |
| 50 - 120 | £1.788 |
| 125 - 245 | £1.606 |
| 250 + | £1.53 |
*price indicative
- RS Stock No.:
- 876-5691P
- Mfr. Part No.:
- STP18N65M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | MDmesh M2 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 330 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 15.75mm | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M2 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 330 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Length 10.4mm | ||
Width 4.6mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 15.75mm | ||
Forward Diode Voltage 1.6V | ||