IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
- RS Stock No.:
- 875-2475P
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Bulk discount available
Subtotal 2 units (supplied in a tube)*
£67.74
(exc. VAT)
£81.28
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 93 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 4 | £33.87 |
| 5 - 9 | £32.83 |
| 10 - 14 | £32.48 |
| 15 + | £32.14 |
*price indicative
- RS Stock No.:
- 875-2475P
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | SMPD | |
| Series | GigaMOS, HiperFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance | 1.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 830 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 590 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 23.25mm | |
| Length | 25.25mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Height | 5.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SMPD | ||
Series GigaMOS, HiperFET | ||
Mounting Type Surface Mount | ||
Pin Count 24 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 830 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 590 nC @ 10 V | ||
Transistor Material Si | ||
Width 23.25mm | ||
Length 25.25mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 5.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS