P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP Vishay Siliconix SI3459BDV-T1-GE3
- RS Stock No.:
- 873-0989
- Mfr. Part No.:
- SI3459BDV-T1-GE3
- Brand:
- Vishay Siliconix
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 873-0989
- Mfr. Part No.:
- SI3459BDV-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TSOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 288 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.3 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.1mm | |
| Height | 1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Series | TrenchFET | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TSOP | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 288 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.3 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7.7 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.1mm | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Series TrenchFET | ||
- COO (Country of Origin):
- CN
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