N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN Infineon IRFH7085TRPBF
- RS Stock No.:
- 872-4170
- Mfr. Part No.:
- IRFH7085TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£14.84
(exc. VAT)
£17.81
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.484 | £14.84 |
| 20 - 40 | £1.321 | £13.21 |
| 50 - 90 | £1.233 | £12.33 |
| 100 - 190 | £1.143 | £11.43 |
| 200 + | £1.095 | £10.95 |
*price indicative
- RS Stock No.:
- 872-4170
- Mfr. Part No.:
- IRFH7085TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 147 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PQFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 5.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.15mm | |
| Height | 0.85mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 147 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PQFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 5.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.15mm | ||
Height 0.85mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Forward Diode Voltage 1.2V | ||