N-Channel MOSFET, 1.9 A, 600 V, 3-Pin DPAK MagnaChip MDD2N60RH
- RS Stock No.:
- 871-6637
- Mfr. Part No.:
- MDD2N60RH
- Brand:
- MagnaChip
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 871-6637
- Mfr. Part No.:
- MDD2N60RH
- Brand:
- MagnaChip
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | MagnaChip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 6.7 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Forward Diode Voltage | 1.4V | |
| Select all | ||
|---|---|---|
Brand MagnaChip | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 6.7 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Forward Diode Voltage 1.4V | ||
- COO (Country of Origin):
- CN