Infineon HEXFET N-Channel MOSFET, 2.6 A, 150 V, 3-Pin SOT-223 IRFL4315TRPBF
- RS Stock No.:
- 865-5822P
- Mfr. Part No.:
- IRFL4315TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£4.40
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£5.30
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Units | Per unit |
|---|---|
| 10 + | £0.44 |
*price indicative
- RS Stock No.:
- 865-5822P
- Mfr. Part No.:
- IRFL4315TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 185 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 2.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.7mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.5V | |
| Height | 1.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 2.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.7mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.5V | ||
Height 1.8mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF
This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.
Features & Benefits
• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
Applications
• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
What is the significance of the low Rds(on) value?
A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.
How does the wide temperature range affect usage?
The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.
Can it be used in both high and low-frequency applications?
Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.
What should be considered for installation?
Proper circuit layout and thermal management should be taken into account to optimise performance during installation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
